With the advantages of extremely high critical breakdown electric field, high off-state blocking voltage, ultra-low on-resistance, ultra-fast switching speed, and harsh environment resistance, AlN becomes an ideal choice for preparing high voltage and high-temperature resistant power electronic devices. AlN device has a powerful processing capacity 15 times that of SiC and GaN, thus it is named "Next Generation of Power Electronic Device Materials". In addition, the development of a single crystalline AlN substrate with low dislocation density (less than 103 cm-2) is the basis for realizing high-quality Al-rich AlGaN growth. Compared with the sapphire substrate, the growth of an Al-rich AlGaN thin film on an AlN homogeneous substrate can greatly reduce the resistivity. Companies have successfully applied it to high-power devices such as high-power transistors, semiconductor lasers, large-scale integrated circuits, solid-state relays and switching power supply.

High power transistor

High power insulated gate bipolar transistor (IGBT) is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric automobiles, new energy equipment, and other fields.
 
The high power IGBT module made with a new thin AlN substrate achieves high heat dissipation capability and high power density. The core technologies of new energy automobiles include power battery, motor, and control system. However, a large number of IGBTs are needed in the control system, such as motor control system, vehicle-mounted air conditioning control system and charging system. IGBT plays an important role in new energy automobiles and becomes one of the core devices in new energy automobiles.

Semiconductor laser

The semiconductor laser or laser diode plays an important role in our daily life. They are composed of a complex multilayer structure that requires nano-scale precision and complex design. Its working principle is to realize the population inversion of non-equilibrium carriers between the energy bands (conduction band and valence band) of semiconductor substances or between the energy band of semiconductor substances and the energy level of impurities (acceptor or donor) through a certain excitation mode. When a large number of electrons in the population inversion state recombine with holes, stimulated emission will occur. With the advantages of ultra-wide band-gap, high electron drift velocity and small dielectric constant, AlN has a good application prospect in the fabrication of high-power semiconductor lasers.

Large scale integrated circuit

The large scale integrated circuit refers to an integrated circuit with 100~9,999 logic gates (or 1,000~99,999 components) and more than 1,000 electronic components integrated on one chip. By using a certain process, transistors, diodes, resistors, capacitors, inductors, and other components and wiring required in a circuit are interconnected together and made on a small piece or several small pieces of semiconductor wafers or dielectric substrates, and then they are packaged in a tube shell to form a microstructure with required circuit functions; in which all the components have been structurally formed as a whole. AlN can be applied in the fabrication of large-scale integrated circuits, providing strong support for the development of the information industry.

Inverter

The heat conduction AlN power module of the photovoltaic inverter. In the half-bridge and full-bridge power modules using SiC trench MOSFET, AlN substrate hybrid integrated gate driver is used, the high switching frequency and low thermal resistance are achieved by using electric-thermal joint simulation and Al heat sink, the direct bonded copper AlN substrate is 0.63 mm thick, the maximum output power is 2 kW, the power density is 3.14 kW/l, and the ultra-high thermal conductivity is 170 W·m-1·K-1, which provides support for the realization of small and efficient power electronic systems.

Power Switch

For a new vertical GaN trench-type power device with a plasma-enhanced atomic layer deposition (PEALD) AlN/GaN heterostructure, after the etching of a n-high resistance layer-n GaN epitaxial trench is completed, a 3~5nm thick AlN layer is deposited by the PEALD method, realizing a vertical 2DEG channel with high electron density and mobility as well as a threshold voltage of 2V. Compared with the traditional GaN MOSFET, the new device achieves 9 times transconductance and extremely high current leakage density of 9 kA/cm2 and has application advantages in the future power switching field.