Developed dedicated and proprietary modeling and simulation tools for AlN single crystal growth by the PVT method.
The growth temperature of AlN single crystals by the PVT method usually is as high as 2,000ºC – 2,300ºC in a closed environment and the crystal growth period is also very long, which pose extreme challenges to the stability of the temperature field and the accuracy of the control system. It is very difficult and expensive to tune process parameters through actual experiments to obtain limited experimental data due to the high growth temperature and harsh growth conditions, or even it is not feasible. Therefore, it has become an indispensable tool to analyze and optimize the AlN crystal growth process by means of numerical modeling and simulation.
At present, there is no mature or commercial simulation software for AlN PVT single crystal growth worldwide, therefore Ultratrend Technologies Co., Ltd. established an R&D team and invested a large amount of R&D resources to develop key modeling and simulation modules by Finite Element Method for the AlN PVT single crystal growth process, such as multiphase flow module, mass transfer module, defect module, impurity distribution prediction module, three-dimensional anisotropic stress simulation module, etc.. It has become a powerful tool for the R&D team to optimize the hotzone design and crystal growth process, and accordingly greatly shorten the product R&D cycle and efficiency.
